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HomeKey Engineering MaterialsKey Engineering Materials Vol. 216SiOx Formation Process between YSZ and Si...

SiO_x Formation Process between YSZ and Si Substrate in YSZ/Si Thin Films by In-Situ TEM Analysis

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Electroceramics in Japan IV

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Periodical:

Key Engineering Materials (Volume 216)

Pages:

153-0

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.216.153

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Online since:

September 2001

Authors:

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Crystallization, Diffusion, In Situ Observation, Oxidation, Silicon, SiO_x, TEM, YSZ

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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