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HomeKey Engineering MaterialsKey Engineering Materials Vols. 228-229Voltage Transient Response of a ZnO-Based...

Voltage Transient Response of a ZnO-Based Multi-Layered Chip Varistor Doped with Alum (AIK(SO₄)₂•12H₂O)

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Asian Ceramic Science for Electronics II and Electroceramics in Japan V

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Periodical:

Key Engineering Materials (Volumes 228-229)

Pages:

179-184

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.228-229.179

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Online since:

September 2002

Authors:

Chul Hong Kim, Jin Ho Kim

Keywords:

Ag-Pd, Alum Doping, Degradation, Non-Linear Coefficient, ZnO-Based Multi-Layered Varistor MLV

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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