Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

Sung Ho Hwang; Jung Il Lee; Jin Dong Song; Won Jun Choi; Il Ki Han; Soo Kyung Chang

doi:10.4028/www.scientific.net/KEM.277-279.1023

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 277-279Electrical and Optical Characterization of Energy...

Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

Abstract:

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

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Key Engineering Materials (Volumes 277-279)

Pages:

1023-1028

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.277-279.1023

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Online since:

January 2005

Authors:

Sung Ho Hwang, Jung Il Lee, Jin Dong Song, Won Jun Choi, Il Ki Han, Soo Kyung Chang

Keywords:

InAs, Quantum Dot (QD), Size Distribution, Thermal Activation Energy

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