Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

Abstract:

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We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

Info:

Periodical:

Key Engineering Materials (Volumes 277-279)

Edited by:

Kwang Hwa Chung, Yong Hyeon Shin, Sue-Nie Park, Hyun Sook Cho, Soon-Ae Yoo, Byung Joo Min, Hyo-Suk Lim and Kyung Hwa Yoo

Pages:

1023-1028

DOI:

10.4028/www.scientific.net/KEM.277-279.1023

Citation:

S. H. Hwang et al., "Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution ", Key Engineering Materials, Vols. 277-279, pp. 1023-1028, 2005

Online since:

January 2005

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$35.00

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