Silicon Oxide Thin Film Deposition on Alumina in a Circulating Fluidized Bed Reactor

Sang Min Park; Soon Hwa Jung; Soung Hee Park; Sang Done Kim

doi:10.4028/www.scientific.net/KEM.277-279.577

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 277-279Silicon Oxide Thin Film Deposition on Alumina in a...

Silicon Oxide Thin Film Deposition on Alumina in a Circulating Fluidized Bed Reactor

Abstract:

Silicon oxide deposition on fine alumina powders by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure was carried out in a circulating fluidized bed reactor. To deposit silicon oxide on alumina powders, the organo-silicon source precursors (tetraethoxysilane (TEOS) and hexamethyldisiloxane (HMDSO)) and oxygen were used as the reactant gases while helium and argon were used as the dilute gases. The surface property of plasma-treated alumina powder varies from hydrophobic to hydrophilic in the surface composition with variation of the discharge power. In oxygen-containing atmospheres, chemical composition of the deposited film is more inorganic with increasing the discharge power and the flow ratio of O2/precursor for both organo-silicon precursors.

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Key Engineering Materials (Volumes 277-279)

Pages:

577-582

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.277-279.577

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Online since:

January 2005

Authors:

Sang Min Park, Soon Hwa Jung, Soung Hee Park, Sang Done Kim

Keywords:

Atmospheric Pressure, Chemical Vapor Deposition (CVD), Circulating Fluidized Bed, HMDSO, Plasma, Powder, TEOS

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References

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