The Structure and Hardness of rf-Reactive Sputtered Ti-Zr-N Films

Abstract:

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Ternary Ti-Zr-N thin films were synthesized by rf-reactive sputtering in Ar–N2 plasma. Effects of the substrate temperature in the sputtering process on the microstructures of Ti-Zr-N thin films were investigated using SEM, TEM, XRD and AES techniques. The hardness of the Ti-Zr-N film increases as the substrate temperature in reactive sputtering increases. The reactive sputtered Ti-Zr-N film is characterized as polycrystalline in nature with two dominant orientations of (111) and (200). A substrate temperature of 300°C is suggested for getting a densely packed film structure with the highest hardness.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

1449-1452

DOI:

10.4028/www.scientific.net/KEM.280-283.1449

Citation:

H. A. Park et al., "The Structure and Hardness of rf-Reactive Sputtered Ti-Zr-N Films", Key Engineering Materials, Vols. 280-283, pp. 1449-1452, 2005

Online since:

February 2007

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$35.00

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