Ferroelectric Properties of Bismuth Titanate Ceramics by Sm3+/V5+ Substitution

Abstract:

Article Preview

The ferroelectricity of Bi3.2Sm0.8Ti3O12 (BST) and Bi3.2Sm0.8Ti2.97V0.03O12 (BSTV)ceramics prepared at 1100oC by a conventional ceramic technique is investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BST ceramics are 16 µC/cm2 and 62kV/cm, respectively. Furthermore, V5+ substitution improves the Pr value of the BST ceramics up to 25µC/cm2, which is larger than that of the BST ceramics. Therefore, the co-substitution of Sm3+ and V5+ in Bi4Ti3O12 (BIT) ceramics is effective for the improvement of its ferroelectricity.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

167-170

DOI:

10.4028/www.scientific.net/KEM.280-283.167

Citation:

M. Chen et al., "Ferroelectric Properties of Bismuth Titanate Ceramics by Sm3+/V5+ Substitution", Key Engineering Materials, Vols. 280-283, pp. 167-170, 2005

Online since:

February 2007

Export:

Price:

$38.00

[1] P.C. Joshi and S.B. Krupanidhi: Appl. Phys. Lett. Vol. 62 (1993), pp. (1928).

[2] Y. Shimakawa. Y. Kubo, Y. Tauchi, H. Asano, T. Kamiyama, F. lzumi, and Z. Hiroi: Appl. Phys. Lett. Vol. 79 (2001), p.2791.

[3] B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, L. Lee, and W. Joe: Nature Vol. 401 (1999), p.682.

[4] H. N. Lee, D. Hesse, N. Zakharov and U. Gösele: Science Vol. 296 (2002), pp. (2006).

[5] Y. Noguchi and M. Miyayama: Appl. Phys. Lett. Vol. 78 (2001), pp. (1903).

[6] T. Kojima, T. Sakai, T. Watanabe, T. Watanabe, and H. Funakubo: Appl. Phys. Lett. Vol. 80 (2002), p.2746.

[7] U. Chon, K.B. Kim, H.M. Jang and G.C. Yi: Appl. Phys. Lett. Vol. 79 (2001), p.3137.

[8] H. Nagata, N. Chikushi and T. Takenaka: Jpn. J. Appl. Phys. Vol. 38 (1999), p.5497.

[9] Y. Shimakawa, Y. Kubo, Y. Tauchi, H. Asano, T. Kamiyama, F. lzumi and Z. Hiroi: Appl. Phys. Lett. Vol. 79 (2001), p.2791.

[10] T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi and M. Miyayama: Appl. Phys. Lett. Vol. 80 (2002), p.100.

In order to see related information, you need to Login.