Study on Gas Sensing Properties of WO3 Thin Films

Miao Jiang; Feng Hou; Ting Xian Xu; Ming Xia Xu

doi:10.4028/www.scientific.net/KEM.280-283.319

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 280-283Study on Gas Sensing Properties of WO3 Thin Films

Study on Gas Sensing Properties of WO₃ Thin Films

Abstract:

Tungsten oxide thin films were prepared by an inorganic-sol-gel dip-coating process, where the sol was obtained by adding citric acid, as chelating agent, to the ammonia solution of tungstic acid. The resultant thin films were a mixture of monoclinic and tetragonal phases of WO3 and, after being pretreated at 600°C and sintered at 650°C, the average grain size of the polycrystalline films was about 500 nm. The gas-sensing properties of WO3 thin films were tested at temperatures ranging from 500° to 600°C and in nitrogen gas containing 5vol% O2 or 5vol% H2. The WO3 sensors exhibited a good sensitivity and response speed at the temperature of 550°C.

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Key Engineering Materials (Volumes 280-283)

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319-322

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https://doi.org/10.4028/www.scientific.net/KEM.280-283.319

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February 2007

Authors:

Miao Jiang, Feng Hou, Ting Xian Xu, Ming Xia Xu

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Inorganic-Sol-Gel Method, Oxygen Sensitivity, WO₃ Thin Films

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