Nitrogen Plasma Source Ion Implantation (PSII) for Improvement of Blood-Compatibility of Silicon

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Periodical:

Key Engineering Materials (Volumes 288-289)

Edited by:

Xingdong Zhang, Junzo Tanaka, Yaoting Yu and Yasuhiko Tabata

Pages:

335-338

DOI:

10.4028/www.scientific.net/KEM.288-289.335

Citation:

P. Yang et al., "Nitrogen Plasma Source Ion Implantation (PSII) for Improvement of Blood-Compatibility of Silicon", Key Engineering Materials, Vols. 288-289, pp. 335-338, 2005

Online since:

June 2005

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Price:

$35.00

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