Nanomechanical Properties of Single-Crystalline Silicon Wafer Irradiated by High-Energy Femtosecond Laser Pulses

Abstract:

Article Preview

High-energy femtosecond laser pulses were utilized to ablate single-crystalline silicon wafer. Collateral damage areas around the ablation zone can be observed in microscope. The morphology in such areas changes gradually. The microscopic morphology and nanomechanical properties of the pre-polished back surface were measured by AFM and Hysitron TriboIndenter respectively. The topography and roughness in the ablated, metamorphic and unaffected zone are almost equal. Yet the elastic ratio and hardness on the back surface vary gradually with indent positions, which coincide with the gradual morphological changes in the metamorphic zone on the front surface. Such regular changes in nanomechanical properties, to some extent, reflect the distribution of collateral damages near the ablated zone on the back surface. And they also testify the occurrence of the ill effects that go against micromachining during high-energy femtosecond laser irradiation.

Info:

Periodical:

Key Engineering Materials (Volumes 315-316)

Edited by:

Zhejun Yuan, Xipeng Xu, Dunwen Zuo, Julong Yuan and Yingxue Yao

Pages:

159-163

DOI:

10.4028/www.scientific.net/KEM.315-316.159

Citation:

Y. S. Wang et al., "Nanomechanical Properties of Single-Crystalline Silicon Wafer Irradiated by High-Energy Femtosecond Laser Pulses ", Key Engineering Materials, Vols. 315-316, pp. 159-163, 2006

Online since:

July 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.