Research on Field-Induced Oxidation Processing Technology by Contact-Mode AFM in Ambient Air

Abstract:

The mechanism responsible for scanning probe field-induced oxidation in ambient air is attributed to an electrochemical process, i.e., anodic oxidation or anodization,after the analyses is given of a surface of a sample exposed to air. The effects of biases, tip speeds on morphology of field-induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth. The field-induced oxidation of hydrogen-passivated Si (Si:H)using contact-mode AFM in air at room temperature is investigated. The result achieved from the experiment and that drawn from theoretical analysis are identical, which indicates the accuracy of the experimental operation.This experiment suggested that it may be used for further investigation of field-induced oxidation technology.

• Periodical: Key Engineering Materials (Volumes 315-316)
• Pages: 254-258
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.315-316.254
• Online since: July 2006
• Authors: Shi Ming Ji, L.B. Zhang, Li Zhang, X.J. Jia, Qiao Ling Yuan, Ju Long Yuan, J.X. Shi, Ya Liang Wang
• Keywords: Atomic Force Microscope (AFM), Electron-Beam, Field-Induced Oxidation, Nano-Fabrication, Scanning Probe Microscopy

References

[1] K. Morimono, F. Perez-Murano and J.A. Dagata: Applied Surface Science, Vol. 158 (2000) No. 3, p.205.

[2] R.M. Silver, J.A. Dagata and W. Tseng: J. of Applied Ph. Solid State Tech., Vol. 79 (1994) No. 9, p.5122.

[3] J.A. Dagata, T. Inoue, J. Itoh, K. Matsumoto and et al: J. of Applied Ph., Vol. 84 (1998) No. 12, p.6891.

[4] M.B. Tian and D.L. Liu: Film Technology Handbook (China Machine Press, China 1991).

[5] P.H. Avouris, R.E. Walkup, A.R. Rossi and et al: Surface Science, Vol. 363 (1996) No. 1-3, p.368.

[6] M.K. Herndon, R.T. Collins, R.E. Hollingsworth and et al: Applied Physics Letters, Vol. 74 (1999) No. 1, p.141.