Deformation Behavior of SiO₂ Doped Nanocrystalline Monoclinic Zirconia at Low Temperatures

Abstract:

The deformation behavior of SiO2 doped nanocrystalline monoclinic zirconia (MZP) was studied at 1323-1223 K in compression tests. The strain rate of SiO2 doped nanocrystalline MZP was slower than that of high-purity MZP by one order of magnitude. SiO2 doped nanocrystalline MZP exhibited a stress exponent n ≈ 2. The apparent activation energy for the deformation of SiO2 doped nanocrystalline MZP was characterized by a higher value than that observed for high-purity MZP. 1wt% SiO2 doped nanocrystalline MZP was deformed at constant flow stress, while the flow stress of high-purity MZP increased significantly with the strain (strain hardening). While no grain growth was observed after the compressive deformation of 1wt % SiO2 doped nanocrystalline MZP, remarkable grain growth was observed after the deformation of high-purity MZP. The addition of SiO2 into nanocrystalline MZP is effective in limiting grain growth at low temperatures

• Periodical: Key Engineering Materials (Volumes 317-318)
• Pages: 433-436
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.317-318.433
• Online since: August 2006
• Authors: Michiyuki Yoshida, Yutaka Shinoda, Takashi Akatsu, Fumihiro Wakai
• Keywords: Deformation, Nanocrystalline Ceramics, Superplasticity, Zirconia

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