Deformation Behavior of SiO2 Doped Nanocrystalline Monoclinic Zirconia at Low Temperatures

Abstract:

Article Preview

The deformation behavior of SiO2 doped nanocrystalline monoclinic zirconia (MZP) was studied at 1323-1223 K in compression tests. The strain rate of SiO2 doped nanocrystalline MZP was slower than that of high-purity MZP by one order of magnitude. SiO2 doped nanocrystalline MZP exhibited a stress exponent n ≈ 2. The apparent activation energy for the deformation of SiO2 doped nanocrystalline MZP was characterized by a higher value than that observed for high-purity MZP. 1wt% SiO2 doped nanocrystalline MZP was deformed at constant flow stress, while the flow stress of high-purity MZP increased significantly with the strain (strain hardening). While no grain growth was observed after the compressive deformation of 1wt % SiO2 doped nanocrystalline MZP, remarkable grain growth was observed after the deformation of high-purity MZP. The addition of SiO2 into nanocrystalline MZP is effective in limiting grain growth at low temperatures

Info:

Periodical:

Key Engineering Materials (Volumes 317-318)

Edited by:

T. Ohji, T. Sekino and K. Niihara

Pages:

433-436

DOI:

10.4028/www.scientific.net/KEM.317-318.433

Citation:

M. Yoshida et al., "Deformation Behavior of SiO2 Doped Nanocrystalline Monoclinic Zirconia at Low Temperatures", Key Engineering Materials, Vols. 317-318, pp. 433-436, 2006

Online since:

August 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.