High Frequency Dielectric Mapping Using Un-Contact Probe for Dielectric Materials

Abstract:

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The microwave reflection intensity was measured at room temperature for Cu-plate, Al2O3 and SrTiO3 single crystals using a un-contact probe as a function of distance between sample and probe. The difference of reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was observed in the region where the distance of 0.2mm between sample and probe, and it was caused from dielectric permittivities of samples. The reflection coefficient of sample was estimated in comparison with results of electromagnetic simulation using finite differential time domain method. The reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was transformed to dielectric permittivity at reflection intensity minimum point. The dielectric permittivity mapping was also examined at reflection intensity minimum point.

Info:

Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

189-192

DOI:

10.4028/www.scientific.net/KEM.320.189

Citation:

H. Kakemoto et al., "High Frequency Dielectric Mapping Using Un-Contact Probe for Dielectric Materials", Key Engineering Materials, Vol. 320, pp. 189-192, 2006

Online since:

September 2006

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$35.00

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