CeO2 Buffer with (200) Preferential Orientation on R-Cut Sapphire by a Solution Deposition Technique

Yao Hui Xue; Chang Sheng Deng; Quing Feng Li; De Sheng Ai; Xia Ming Dai

doi:10.4028/www.scientific.net/KEM.336-338.726

Paper Titles

Application of Rare Earth Permanent Magnet on Magnetic Abrasive Machining
p.712

Growth and Characterization of BaZrO₃ Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate
p.715

The Stability Range of Lead Oxide Compounds in Bi-System High Temperature Superconducting Materials
p.719

Synthesis of MgB₂ from Anhydrous B₂O₃ by Ball Milling Method and Determination of Superconductivity Properties
p.723

CeO₂ Buffer with (200) Preferential Orientation on R-Cut Sapphire by a Solution Deposition Technique
p.726

Preparation of BaRuO₃ and BaIrO₃ Films by Laser Ablation
p.730

Effects of Different Antimony Dopants on ZnO-V₂O₅ Based Varistor Ceramics
p.735

Fabrication of High Performance Multilayer ZnO Varistors with Chemically Synthesized Doped Zinc Oxide Powder
p.739

Effect of V₂O₅ Additive on the Microstructure and Electrical Properties of Mn-Co-NiO NTC Thermistor
p.743

HomeKey Engineering MaterialsKey Engineering Materials Vols. 336-338CeO2 Buffer with (200) Preferential Orientation on...

CeO₂ Buffer with (200) Preferential Orientation on R-Cut Sapphire by a Solution Deposition Technique

Abstract:

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

726-729

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.726

Citation:

Cite this paper

Online since:

April 2007

Authors:

Yao Hui Xue, Chang Sheng Deng, Quing Feng Li, De Sheng Ai, Xia Ming Dai

Keywords:

CeO₂ Coating, Chemical Solution Deposition, Preferred Orientation, Sapphire

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] Y.L. Xu and D. Shi: Tsignhua Sci Technol. Vol. 8 (2003), p.342.

Google Scholar

[2] X.D. Wu, R.C. Dye, R.E. Muenchausen, et al.: Appl. Phys. Lett. Vol. 58 (1991), p.2165.

Google Scholar

[3] X. Castel, M. Guilloux-Viry, A. Perrin, et al.: J Cryst. Growth Vol. 187 (1998), p.211.

Google Scholar

[4] Z. Lu, R. Hiskes, S.A. Dicarolis, et al.: J. Cryst. Growth Vol. 156 (1995), p.227.

Google Scholar

[5] E. Celik and S.H. Yusuf: Mater. Sci. Eng. Vol. B94 (2002), p.176.

Google Scholar

[6] Y.H. Xue, C.S. Deng, Q.F. Li, et al.: Chin. J. Nonferr. Metals Vol. 14 (2004), p.488.

Google Scholar