Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Abstract:

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Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

109-111

DOI:

10.4028/www.scientific.net/KEM.368-372.109

Citation:

X. A. Li et al., "Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering", Key Engineering Materials, Vols. 368-372, pp. 109-111, 2008

Online since:

February 2008

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Price:

$35.00

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