Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering
Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.
Wei Pan and Jianghong Gong
X. A. Li et al., "Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering", Key Engineering Materials, Vols. 368-372, pp. 109-111, 2008