Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Xing Ao Li; Zu Li Liu; An You Zuo; Zuo Bin Yuan; Jian Ping Yang; Kai Lun Yao

doi:10.4028/www.scientific.net/KEM.368-372.109

Paper Titles

Preparation and Dielectric Properties of the Layered Perovskite Sr₄Bi₄Ti₇O₂₄ Ferroelectric Ceramics
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Ferroelectric Properties of Sol-Gel Derived Ca_1-xSr_xBi₄Ti₄O₁₅ Thin Films
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Synthesis of Nanocrystalline 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ Powder by a Citrate Method
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Processing and Properties of Ferroelectric Bi_4-x La _xTi₃O₁₂ Ceramics
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Bi_4-xLa_xTi₃O₁₂ Ferroelectric Thin Films Prepared by RF Magnetron Sputtering
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Preparation and Magnetic Property of Bi₂Fe₄O₉ Nanoparticles by Hydrothermal Method
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Molten Salt Synthesis of CaCu₃Ti₄O₁₂
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Effects of the Replacement of Ti by Zr on the Dielectric Properties of CaCu₃Ti₄0₁₂ Ceramics
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Effects of CuO on the Preparation, Microstructure and Dielectric Response of CaCu₃Ti₄O₁₂
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared...

Bi_4-xLa_xTi₃O₁₂ Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

Abstract:

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

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Key Engineering Materials (Volumes 368-372)

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109-111

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https://doi.org/10.4028/www.scientific.net/KEM.368-372.109

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February 2008

Authors:

Xing Ao Li, Zu Li Liu, An You Zuo, Zuo Bin Yuan, Jian Ping Yang, Kai Lun Yao

Keywords:

BLT Thin Film, Ferroelectric Property, RF Magnetron Sputtering

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