Growth and Characterization of Silicon Carbide by Sublimation

Yang Wang; Long Wan; Xiao Pan Liu; Wen Min Ma

doi:10.4028/www.scientific.net/KEM.368-372.1561

Paper Titles

Preparation and Characterization of Desulfurization Sorbent from Hydrated Lime and Blast Furnace Slag
p.1548

Local Structures and Decomposed Phases of Laser-Melted ZrSiO₄
p.1552

Effect of Calcination Temperature on the Microstructure and Morphology of Bi_3.25La_0.75Ti₃O₁₂ Powders Synthesized from Polymerized Precursors
p.1555

Mass Loss in SiC Crystal Growth Process
p.1558

Growth and Characterization of Silicon Carbide by Sublimation
p.1561

Reaction Processes and Thermodynamic Modeling for SiAlON Structural Ceramic Powders Synthesized from Nonmetallic Mine
p.1564

Synthesis of Low Agglomerating Spherical α-Fe₂O₃ Nanopowders
p.1568

Preparation and Thermal Decomposition Mechanism of Sr²⁺-Doped Mg,Al-Hydrotalcite Nanocrystalline
p.1570

Formation of Mg₂Si - 10vol%Al Composite via Solid-State Reaction
p.1573

HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Growth and Characterization of Silicon Carbide by...

Growth and Characterization of Silicon Carbide by Sublimation

Abstract:

Bulk silicon carbide (SiC) single crystal was fabricated by attaching abrasive SiC powder directly to graphite electrode. The substrate temperature was important to SiC crystal growth. When the temperature of substrate varied from 2300K to 2600K, with substrate temperature increase, the size of finally obtained SiC single crystal increased. At 2600K, the maximum size of SiC crystal, 2cm in diameter, was obtained. The effect of temperature to SiC single crystal growth rate and the growth kinetics were discussed. The phase composition and surface morphology was studied by XRD and SEM respectively.