Ab-Initio Study on Adsorption and Diffusion of Au Atoms on Clean Si(001) and H-Si(001) Surface

Abstract:

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Performing ab-initio total-energy calculations to investigate the adsorption and diffusion processes of the Au atoms with both the clean Si(001)-(1×1) and H-terminated Si(001)-(2×1) surfaces. It was found that, on the clean Si(001)-(1×1) surface, the most stable adsorption sites for Au atoms are middle part of four Si atoms, while on H-terminated Si(001)-(2×1) surface, the most stable sites are the middle part of a Si-Si dimer. The result showed that surface hydrogenation make most stable site transfer and affect the adsorption of Au on Si(001) surface.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1699-1701

DOI:

10.4028/www.scientific.net/KEM.368-372.1699

Citation:

W. W. Ju et al., "Ab-Initio Study on Adsorption and Diffusion of Au Atoms on Clean Si(001) and H-Si(001) Surface", Key Engineering Materials, Vols. 368-372, pp. 1699-1701, 2008

Online since:

February 2008

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$35.00

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