Simulation of the Grain Boundary Effects in PTCR Ceramics

Abstract:

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The positive temperature coefficient of resistivity (PTCR) behavior of semiconductive BaTiO3 ceramics is often explained by the Heywang model. However, Heywang model couldn’t explain some experimental phenomena of jump range more than 106. This paper considered that the migration of donors, electrons and holes has important influence on grain boundary effect. A differential equation about Fermi level was established on the base of Heywang model. By solving the equation the jump range can be calculated quantitatively. It was found that a potential well exists on the edge of grain due to the donor ionization, and the experimental phenomena of PTC jump range more than 106 could be explained.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1692-1694

DOI:

10.4028/www.scientific.net/KEM.368-372.1692

Citation:

C. Fang et al., "Simulation of the Grain Boundary Effects in PTCR Ceramics", Key Engineering Materials, Vols. 368-372, pp. 1692-1694, 2008

Online since:

February 2008

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$35.00

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