Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi4Ti4O15 Films with Different Orientation

Abstract:

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(001)-, (1110), and (105)- oriented SrBi4Ti4O15 films with its c-axis tilted 0, 45 and 55o from the surface normal were epitaxially grown by metal organic chemical vapor deposition and the temperature dependency of the dielectric constant was systematically investigated. Relative dielectric constant, εr, and its temperature dependency increased when the tilting angle of the c-axis from the substrate surface normal increased. Temperature dependency of εr was positive in case of the (105) and (1110) orientation, which is in good agreement with the conventional ferroelectric materials. On the other hand, it became negative for (001) orientation. This shows the orientation dependency of εr in SrBi4Ti4O15.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1811-1813

DOI:

10.4028/www.scientific.net/KEM.368-372.1811

Citation:

H. Funakubo et al., "Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi4Ti4O15 Films with Different Orientation", Key Engineering Materials, Vols. 368-372, pp. 1811-1813, 2008

Online since:

February 2008

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Price:

$35.00

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