2.45 GHz Microwave Sintering of Silicon Nitride

Abstract:

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Microwave sintered Si3N4-MgO system that contains 2, 4 and 10 wt% of ZrO2 as secondary particulates were investigated with respect to phase transformation and microstructure development. The experimental results of microwave sintered samples were compared with conventional methods. Complete α to β phase transformation was observed in the case of microwave sintered samples due to the volumetric nature of microwave heating. High temperature X-ray diffraction (HTXRD) analysis was performed to study in-situ the oxidation behavior of Si3N4 specimens. Si3N4 specimens with 10 wt % ZrO2 were exposed to air at temperature between 25°C and 900°C for up to 24 hours. Microwave sintered sample were structurally stable in air 25°C and 900°C for up to 24 hours of testing.

Info:

Periodical:

Edited by:

Katsutoshi Komeya, Yi-Bing Cheng, Junichi Tatami and Mamoru Mitomo

Pages:

27-30

DOI:

10.4028/www.scientific.net/KEM.403.27

Citation:

S. Chockalingam et al., "2.45 GHz Microwave Sintering of Silicon Nitride", Key Engineering Materials, Vol. 403, pp. 27-30, 2009

Online since:

December 2008

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$35.00

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