2.45 GHz Microwave Sintering of Silicon Nitride

S. Chockalingam; J.P. Kelly; V.R.W. Amarakoon; James R. Varner

doi:10.4028/www.scientific.net/KEM.403.27

Paper Titles

New Green Phosphor Ba₃Si₆O₁₂N₂:Eu for White LED: Crystal Structure and Optical Properties
p.11

Application of Nitride and Oxynitride Compounds to Various Phosphors for White LED
p.15

Fabrication of Electrically Conductive Si₃N₄ Ceramics by Dispersion of Carbon Nanotubes
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Low Temperature Sintering of Si₃N₄ Ceramics and its Applicability as an Inert Matrix of the Transuranium Elements for Transmutation of Minor Actinides
p.23

2.45 GHz Microwave Sintering of Silicon Nitride
p.27

Sintering Shrinkage Behavior of Si₃N₄ Ceramics Prepared by a Post-Reaction Sintering Technique
p.31

Sintering Shrinkage Behavior and Mechanical Properties of HfO₂-Added Si₃N₄ Ceramics
p.35

Fabrication and Evaluation of AlN–SiC Solid Solutions with p-Type Electrical Conduction
p.39

Atomic Resolution and In Situ Characterization of Structural Ceramics
p.43

HomeKey Engineering MaterialsKey Engineering Materials Vol. 4032.45 GHz Microwave Sintering of Silicon Nitride

2.45 GHz Microwave Sintering of Silicon Nitride

Abstract:

Microwave sintered Si3N4-MgO system that contains 2, 4 and 10 wt% of ZrO2 as secondary particulates were investigated with respect to phase transformation and microstructure development. The experimental results of microwave sintered samples were compared with conventional methods. Complete α to β phase transformation was observed in the case of microwave sintered samples due to the volumetric nature of microwave heating. High temperature X-ray diffraction (HTXRD) analysis was performed to study in-situ the oxidation behavior of Si3N4 specimens. Si3N4 specimens with 10 wt % ZrO2 were exposed to air at temperature between 25°C and 900°C for up to 24 hours. Microwave sintered sample were structurally stable in air 25°C and 900°C for up to 24 hours of testing.