Electrical Properties and Piezoelectric Properties of CaBi2Ta2O9-Based Ceramics

Toji Tokusu; Hirokazu Miyabayashi; Yuji Hiruma; Hajime Nagata; Tadashi Takenaka

doi:10.4028/www.scientific.net/KEM.421-422.46

Paper Titles

Growth and Characterization of Bismuth Magnesium Titanate Bi(Mg_1/2Ti_1/2)O₃
p.30

Phase Diagram and Microstructure Analysis of Barium Titanate – Potassium Niobate System Piezoelectric Ceramics
p.34

Crystal Structure Analysis of Barium Titanate – Bismuth Perovskite-Type Oxide System Ceramics and their Piezoelectric Property
p.38

Electrical Properties and Phase Transition Behavior of (Li,Na,Ba)(Nb,Ti)O₃ Lead-Free Piezoelectric Ceramics
p.42

Electrical Properties and Piezoelectric Properties of CaBi₂Ta₂O₉-Based Ceramics
p.46

Preparation of CaBi₄Ti₄O₁₅ Based Thick Films on Si Substrates by Screen Printing
p.50

Effects of Compressive Stress on Dielectric Properties of Lead-Free (Bi_1/2Na_1/2)TiO₃-(K_1/2Na_1/2)NbO₃ Ceramic Systems
p.54

Dielectric Properties of Low-Temperature Sintered Ba_0.6Sr_0.4TiO₃ Ceramics by Addition of Bi₂O₃-CuO Mixed Oxides
p.61

Investigation on the Effect of Mn on the Dielectric Properties of Ba_0.4Sr_0.6TiO₃/MgAl₂O₄/MgO Composite Ceramics
p.65

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Electrical Properties and Piezoelectric Properties of CaBi₂Ta₂O₉-Based Ceramics

Abstract:

Electrical and piezoelectric properties of CaBi2Ta2O9-based ceramics have been studied. Temperature dependence of dielectric properties indicated that the Curie temperature, TC, was 923°C. Coercive field, EC, and remanent polarization, Pr, became saturated with increasing temperature. It is expected that higher-temperature than 250°C could promote the domain wall motion during the poling treatment. From resonance and antiresonance measurements, piezoelectric properties such as the maximum phase, max, electromechanical coupling factor, k33, and piezoelectric g constant, g33, were 86.1º, 0.085 and 8.4 × 10-3 V∙m/N, at room temperature, respectively.