Preparation of CaBi4Ti4O15 Based Thick Films on Si Substrates by Screen Printing

Tatsunori Kakuda; Tomoaki Futakuchi; Tsutomu Obata; Yuichi Sakai; Masatoshi Adachi

doi:10.4028/www.scientific.net/KEM.421-422.50

Paper Titles

Phase Diagram and Microstructure Analysis of Barium Titanate – Potassium Niobate System Piezoelectric Ceramics
p.34

Crystal Structure Analysis of Barium Titanate – Bismuth Perovskite-Type Oxide System Ceramics and their Piezoelectric Property
p.38

Electrical Properties and Phase Transition Behavior of (Li,Na,Ba)(Nb,Ti)O₃ Lead-Free Piezoelectric Ceramics
p.42

Electrical Properties and Piezoelectric Properties of CaBi₂Ta₂O₉-Based Ceramics
p.46

Preparation of CaBi₄Ti₄O₁₅ Based Thick Films on Si Substrates by Screen Printing
p.50

Effects of Compressive Stress on Dielectric Properties of Lead-Free (Bi_1/2Na_1/2)TiO₃-(K_1/2Na_1/2)NbO₃ Ceramic Systems
p.54

Dielectric Properties of Low-Temperature Sintered Ba_0.6Sr_0.4TiO₃ Ceramics by Addition of Bi₂O₃-CuO Mixed Oxides
p.61

Investigation on the Effect of Mn on the Dielectric Properties of Ba_0.4Sr_0.6TiO₃/MgAl₂O₄/MgO Composite Ceramics
p.65

B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO₃-xCa(Zn_1/3Nb_2/3)O₃ Perovskite Ceramics
p.69

HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Preparation of CaBi4Ti4O15 Based Thick Films on Si...

Preparation of CaBi₄Ti₄O₁₅ Based Thick Films on Si Substrates by Screen Printing

Abstract:

CaBi4Ti4O15 based thick films were prepared by screen-printing method on Si substrates. Screen-printable pastes were prepared by kneading the CaBi4Ti4O15 powder in a three-roll mill with an organic vehicle. The remanent polarization of 6.3 C/cm2 and coercive field of 130kV/cm were obtained for the CaBi4Ti4O15 with Nb2O5 1wt% thick film fired at 1130°C. The cavity structure was prepared by etching of Si substrate. The displacement-electric field butterfly curves were obtained.