Fabrication of High Thermal Conductivity β-Si3N4 Ceramics at Relatively Low Temperature Using MgSiN2 as Additives

Abstract:

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Silicon nitride ceramics with MgSiN2 as additives were sintered by hot pressing at 1600° ~ 1750 °C for 1-12 h under uniaxial pressure of 20 MPa. The specimens were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and photothermal deflection spectroscopy. After sintered at 1750°C for 1 h, the thermal conductivity of the material was 90 W·m-1·K-1. The thermal conductivity could remarkably increase to 120 W·m-1·K-1 by prolonging the dwell time from 1 h to 12 h. The present work demonstrated that MgSiN2 additives were effective to improve the thermal conductivity of β-Si3N4 ceramic.

Info:

Periodical:

Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong

Pages:

783-786

DOI:

10.4028/www.scientific.net/KEM.434-435.783

Citation:

G. H. Peng et al., "Fabrication of High Thermal Conductivity β-Si3N4 Ceramics at Relatively Low Temperature Using MgSiN2 as Additives", Key Engineering Materials, Vols. 434-435, pp. 783-786, 2010

Online since:

March 2010

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Price:

$35.00

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