Fabrication of High Thermal Conductivity β-Si₃N₄ Ceramics at Relatively Low Temperature Using MgSiN₂ as Additives

Abstract:

Silicon nitride ceramics with MgSiN2 as additives were sintered by hot pressing at 1600° ~ 1750 °C for 1-12 h under uniaxial pressure of 20 MPa. The specimens were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and photothermal deflection spectroscopy. After sintered at 1750°C for 1 h, the thermal conductivity of the material was 90 W·m-1·K-1. The thermal conductivity could remarkably increase to 120 W·m-1·K-1 by prolonging the dwell time from 1 h to 12 h. The present work demonstrated that MgSiN2 additives were effective to improve the thermal conductivity of β-Si3N4 ceramic.

• Periodical: Key Engineering Materials (Volumes 434-435)
• Pages: 783-786
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.434-435.783
• Online since: March 2010
• Authors: Gui Hua Peng, Zhen Hua Liang, Feng Qi Lu, Qian Liu, Wen Lan Li
• Keywords: Low-Temperature, MgSiN₂, Thermal Conductivity (TC), β-Si₃N₄

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