Advantages in the Small-Angle Scattering of X-Ray for Studying Optoelectronic Devices within the Frames of ISTC Projects

Michael E. Boiko; Andrei M. Boiko

doi:10.4028/www.scientific.net/KEM.437.641

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Advantages in the Small-Angle Scattering of X-Ray for Studying Optoelectronic Devices within the Frames of ISTC Projects
p.641

HomeKey Engineering MaterialsKey Engineering Materials Vol. 437Advantages in the Small-Angle Scattering of X-Ray...

Advantages in the Small-Angle Scattering of X-Ray for Studying Optoelectronic Devices within the Frames of ISTC Projects

Abstract:

The project ISTC “SPECTROMETRIC POSITION SENSITIVE DETECTOR WITH BASE ENERGY SHIFT” is interesting for creation new area semiconductor detector device for EXAFS spectroscopy, for traditional X-ray diffractometry (XRD), as well as Small-Angle X-ray Scattering diffractometry (SASX). Diffractometry methods allow creating original features of position sensitive detector. Crystallography quality of silicon multi layer detector with original photo mask was examined by XRD and SAXS with ordinary scintillation detectors. Grazed incidence SAXS (GISAXS) provides information both about lateral and normal ordering of multilayers at a surface or inside a thin epitaxial film [1]. Using high-energy X-ray source (rotating anode or synchrotron radiation in future) and high adjustment monochromator SAXS rocking curves in transition and reflection mode had been received. It allows obtaining the information of 3D size lamellar or column-like domains. Results of an experimental investigation of the size layer structure are presented.

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Periodical:

Key Engineering Materials (Volume 437)

Pages:

641-645

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.437.641

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Online since:

May 2010

Authors:

Michael E. Boiko, Andrei M. Boiko

Keywords:

Crystallography, Domain Wall, SAXS, X-Ray

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References

[1] M.E. Boiko, N.B. Strokan et al: Resistance of Silicon Planar detectors to X-rays. Instruments and Experiment Techniques. Vol. 43 (2000), No 3, pp.388-392.

DOI: 10.1007/bf02759042

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[3] M.E. Boiko: �ew Way of Solid State Domain Characterization in Silicon Carbide and Gallum �itride. XI International Conference on Small-Angle Scattering Brookhaven (1999).

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