Charge Transport Mechanism and the Effects of Device Temperature on Electrical Parameters of Au/ZnPc/N-Si Structures

Abstract:

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Gold/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer have been developed and characterized by Current–Voltage-Temperature (I-V-T) measurements, to study its junction and charge transport properties. The junction parameters, of diode ideality factor (n), barrier height (b) and series resistance (R¬S), of the device are found to shift with device temperature. The barrier height and the diode ideality factor are found to increase and the series resistance is found to decrease with increasing device temperature. The activation energy of the charge carriers is found to be 44 meV and the peak of interface state energy distribution curves is found to shift in terms of Ess-Ev value from 0.582 eV to 0.776 eV with increasing device temperature. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature by 100 meV in the device temperature range of 283K to 343K. In terms of dominant conduction mechanism, the I-V-T data analysis confirms the fit of data to the relationship log (IV4)  V1/2 for higher device temperatures and the Poole-Frenkel type is found to be the dominant conduction mechanism for the hybrid device.

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Periodical:

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Edited by:

Shaheed Khan, Iftikhar us Salam and Karim Ahmed

Pages:

372-380

DOI:

10.4028/www.scientific.net/KEM.442.372

Citation:

A. Hussain et al., "Charge Transport Mechanism and the Effects of Device Temperature on Electrical Parameters of Au/ZnPc/N-Si Structures", Key Engineering Materials, Vol. 442, pp. 372-380, 2010

Online since:

June 2010

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$35.00

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