DLTS Studies of Al Diffused n-Si

Abstract:

We have studied the electrical properties of Si p-n junction diodes by deep level transient spectroscopy (DLTS) measurements. The p-n junctions were developed on a Phosphorus doped Si by depositing Al and annealing at various temperatures. In order to confirm junction formation, current-voltage and capacitance-voltage measurements were made. Two deep levels at Ec-0.17 eV (E1) and Ec-0.44 eV (E2) were observed in the DLTS spectrum. These traps have been characterized by their capture cross-section, activation energy level and trap density. On the basis of these parameters, level E1 can be assigned as V-O complex and E2 as P-V complex. These traps are related to the growth of n-Si wafer and not due to Al diffusion.

• Periodical: Key Engineering Materials (Volume 442)
• Pages: 393-397
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.442.393
• Online since: June 2010
• Authors: S. Siddique, M.M. Asim, F. Saleemi, S. Naseem
• Keywords: C-V Measurement, Deep Level, DLTS, I-V Measurement, Silicon p-n Junction

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