Study on the Luminescence and Reflection Spectra of Al2O3 Doped Er2O3 Films on Si Substrates

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Abstract:

Amorphous Al2O3 doped Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Emission spectra exhibit a strong emission band around 410 nm and a series of emission band near 970, 980, 1018, 1042 and 1080nm. Ellipsometry measurements show that the refractive index of the ErAlO films in the region of 400~1000 nm is between 1.76-1.83. The reflectivity of the ErAlO on Si is much smaller than that of clean Si and pure Er2O3 films. All the results indicate that ErAlO could be a promising material for Si solar cells.

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Key Engineering Materials (Volumes 474-476)

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345-348

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April 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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