Study on the Luminescence and Reflection Spectra of Al2O3 Doped Er2O3 Films on Si Substrates

Abstract:

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Amorphous Al2O3 doped Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Emission spectra exhibit a strong emission band around 410 nm and a series of emission band near 970, 980, 1018, 1042 and 1080nm. Ellipsometry measurements show that the refractive index of the ErAlO films in the region of 400~1000 nm is between 1.76-1.83. The reflectivity of the ErAlO on Si is much smaller than that of clean Si and pure Er2O3 films. All the results indicate that ErAlO could be a promising material for Si solar cells.

Info:

Periodical:

Key Engineering Materials (Volumes 474-476)

Edited by:

Garry Zhu

Pages:

345-348

DOI:

10.4028/www.scientific.net/KEM.474-476.345

Citation:

Y. Y. Zhu et al., "Study on the Luminescence and Reflection Spectra of Al2O3 Doped Er2O3 Films on Si Substrates", Key Engineering Materials, Vols. 474-476, pp. 345-348, 2011

Online since:

April 2011

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Price:

$35.00

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