Martensitic Transformation Behavior of Ni54.75Mn13.25Fe7Ga25 Ferromagnetic Shape Memory Thin Film

Hai Bo Wang; Hao Xiong; Li Ma; Wei Cai

doi:10.4028/www.scientific.net/KEM.474-476.408

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 474-476Martensitic Transformation Behavior of...

Martensitic Transformation Behavior of Ni_54.75Mn_13.25Fe₇Ga₂₅ Ferromagnetic Shape Memory Thin Film

Abstract:

The Ni_54.75Mn_13.25Fe₇Ga₂₅ (at.%) ferromagnetic shape memory thin film was deposited onto silicon substrates using radio-frequency magnetron sputtering. The martensitic transformation, crystallographic structure, microstructure and magnetic-field induced strain were investigated by means of Differential Scanning Calorimetry (DSC), X-ray diffraction (XRD), Transmission Electron Microscope (TEM) and metal strain gauges. The results show that the martensite transformation temperature M_s is 296.6 K, the film with typical self-accommodated morphology is orthorhombic structure at room temperature. The field-induced strain of 52 ppm is obtained in this shape memory thin film.

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Key Engineering Materials (Volumes 474-476)

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408-412

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https://doi.org/10.4028/www.scientific.net/KEM.474-476.408

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April 2011

Authors:

Hai Bo Wang, Hao Xiong, Li Ma, Wei Cai

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Ni-Mn-Fe-Ga, Reverse Martensitic Transformation, Self-Accommodated Morphology, Thin Film

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