Martensitic Transformation Behavior of Ni54.75Mn13.25Fe7Ga25 Ferromagnetic Shape Memory Thin Film
The Ni54.75Mn13.25Fe7Ga25 (at.%) ferromagnetic shape memory thin film was deposited onto silicon substrates using radio-frequency magnetron sputtering. The martensitic transformation, crystallographic structure, microstructure and magnetic-field induced strain were investigated by means of Differential Scanning Calorimetry (DSC), X-ray diffraction (XRD), Transmission Electron Microscope (TEM) and metal strain gauges. The results show that the martensite transformation temperature Ms is 296.6 K, the film with typical self-accommodated morphology is orthorhombic structure at room temperature. The field-induced strain of 52 ppm is obtained in this shape memory thin film.
H. B. Wang et al., "Martensitic Transformation Behavior of Ni54.75Mn13.25Fe7Ga25 Ferromagnetic Shape Memory Thin Film", Key Engineering Materials, Vols. 474-476, pp. 408-412, 2011