Martensitic Transformation Behavior of Ni54.75Mn13.25Fe7Ga25 Ferromagnetic Shape Memory Thin Film

Abstract:

Article Preview

The Ni54.75Mn13.25Fe7Ga25 (at.%) ferromagnetic shape memory thin film was deposited onto silicon substrates using radio-frequency magnetron sputtering. The martensitic transformation, crystallographic structure, microstructure and magnetic-field induced strain were investigated by means of Differential Scanning Calorimetry (DSC), X-ray diffraction (XRD), Transmission Electron Microscope (TEM) and metal strain gauges. The results show that the martensite transformation temperature Ms is 296.6 K, the film with typical self-accommodated morphology is orthorhombic structure at room temperature. The field-induced strain of 52 ppm is obtained in this shape memory thin film.

Info:

Periodical:

Key Engineering Materials (Volumes 474-476)

Edited by:

Garry Zhu

Pages:

408-412

DOI:

10.4028/www.scientific.net/KEM.474-476.408

Citation:

H. B. Wang et al., "Martensitic Transformation Behavior of Ni54.75Mn13.25Fe7Ga25 Ferromagnetic Shape Memory Thin Film", Key Engineering Materials, Vols. 474-476, pp. 408-412, 2011

Online since:

April 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.