Effect of Different S/In Ratio on Properties of In2S3 Films Prepared by Ultrasonic Spray Pyrolysis Method

Xiao Zhang; Hua Wang; Ji Wen Xu; Ling Yang; Ming Fang Ren

doi:10.4028/www.scientific.net/KEM.474-476.998

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 474-476Effect of Different S/In Ratio on Properties of...

Effect of Different S/In Ratio on Properties of In₂S₃ Films Prepared by Ultrasonic Spray Pyrolysis Method

Abstract:

In₂S₃ thin films have been prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different S/In ratios have been investigated. XRD analysis demonstrated that as-prepared In₂S₃ thin films have a preferential orientation along the (220) direction and no other phases are observed. Uniformity, density, crystallinity of films were significantly affected by S/In ratios, which influence photoelectric properties of the films. In₂S₃ thin film is close to standard stoichiometric composition when S/In ratio is 2. Optical transmittance of films is over 90% in the visible region and its energy band gap come up to 2.46eV.

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Key Engineering Materials (Volumes 474-476)

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998-1001

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.474-476.998

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April 2011

Authors:

Xiao Zhang, Hua Wang, Ji Wen Xu, Ling Yang, Ming Fang Ren

Keywords:

In₂S₃, S/N Ratio, Ultrasonic Spray Pyrolysis

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