Resistivity of Thin Films of MoSi2–Si Composites

Shinya Hikita; Teppei Hayashi; Yuuki Sato; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.485.265

Paper Titles

Multilayer Varistor with Low-Voltage Characteristics from ZnO + ACoO₃ Ceramics (A = Ca, Sr and Ba)
p.249

Effect of Sb Addition on ZnO Grain Growth and Electrical Characteristics of Bi–Co–Mn–Ba-Added ZnO Varistors
p.253

Effect of Simultaneous Addition of Zr and Y on Electrical Characteristics of ZnO Varistors
p.257

Cathodoluminescence of ZnO Crystals Prepared via Electric Current Heating Method Using Zn Wire
p.261

Resistivity of Thin Films of MoSi₂–Si Composites
p.265

Investigation of Electrical Hydrogen Detection Properties of Pt/WO₃ Thin Films Prepared by Sol-Gel Method
p.271

Low Temperature Preparation and Optical Hydrogen Response of Pd/Titania Composite Film
p.275

Synthesis of AnataseTiO₂ Having High Specific Surface Area from a Gel Precursor
p.279

Solvothermal Synthesis of WO₃ Photocatalysts and their Enhanced Activity
p.283

HomeKey Engineering MaterialsKey Engineering Materials Vol. 485Resistivity of Thin Films of MoSi2–Si Composites

Resistivity of Thin Films of MoSi₂–Si Composites

Abstract:

Thin films of the composite of molybdenum silicate (MoSi₂) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi₂and Si. The composite thin film consisted of two types of molybdenum silicate with hexagonal and unknown crystal structures. The temperature dependence of the resistivity of a thin film was measured using the four-probe method. The sign of the temperature coefficient of the resistivity changed from positive to negative with increasing molar ratio of Si to Mo. It was suggested that molybdenum silicate with the hexagonal structure had both positive and negative temperature coefficients of resistivity, whereas the unknown structure showed only a negative temperature coefficient of resistivity.