Interface Reaction Behavior between Mn and SiO2 Formed by RF Sputter Deposition

Byeong Taek Bae; Hideaki Nakano; Junichi Koike

doi:10.4028/www.scientific.net/KEM.508.48

Paper Titles

Preparation of Nano-Sized ZrO₂ Powders by Polyvinyl Alcohol-Gel Method
p.27

Effect of Heating Rate on the Synthesis and Sintering of Ternary Carbide Zr₂Al₃C₄ through Spark Plasma Sintering
p.32

Densification and Microstructure of Monolithic TiN and TiB₂ Fabricated by Spark Plasma Sintering
p.38

Thermo-Mechanical Analysis of Si₃N₄-Based Seal Coatings on Si₃N₄ Substrate
p.42

Interface Reaction Behavior between Mn and SiO₂ Formed by RF Sputter Deposition
p.48

Phase Transformation and Densification of hBN-TiN Composites Fabrication by Spark Plasma Sintering
p.52

Formation of Mo₂S₃ Layers on the Surface of Graphitic Platelets
p.56

Foaming of CNTs/PMMA Nanocomposite with Supercritical Carbon Dioxide
p.61

Silicon Carbide Coating on Diamond Powder by Rotary Chemical Vapor Deposition
p.65

HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Interface Reaction Behavior between Mn and SiO2...

Interface Reaction Behavior between Mn and SiO₂ Formed by RF Sputter Deposition

Abstract:

The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO₂. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO₂/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO₂ Substrates.

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Key Engineering Materials (Volume 508)

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48-51

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.48

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Online since:

March 2012

Authors:

Byeong Taek Bae, Hideaki Nakano, Junichi Koike

Keywords:

Electric Field, Interface Reaction, Mn, SiO₂, TEM

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References

[1] J. Koike and M. Wada, Appl. Phys. Lett. 87, 041911(2005).

Google Scholar

[2] M. Haneda, J. Iijima, and J. Koike, Appl. Phys. Lett. 90, 252107 (2007).

Google Scholar

[3] N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948).

Google Scholar

[4] J. Koike, M. Haneda, J. Iijima, Y. Otsuka, H. Sako, and K. Neishi, J. Appl. Phys. 102, 043527 (2007).

Google Scholar

[5] J. M. Ablett, J. C. Woicik, Zs. Tokei, S. List, and E. Dimasi, Appl. Phys. Lett. 94, 042112 (2009).

Google Scholar

[6] K. Matsumoto, K. Neishi, H. Itoh, H. Miyoshi, H. Sato, S. Hosaka, and J. Koike, Jpn. J. Appl. Phys. 49, 05FA12 (2010).

DOI: 10.1143/jjap.49.05fa12

Google Scholar

[7] Nguyen Mai Phuong, Koji Neishi, Yuji Sutou, and Junichi Koike, J. Phys. Chem. C 115,　16731–16736 (2011).

DOI: 10.1021/jp201299w

Google Scholar

[8] P. Casey, J. Bogan, J. G. Lozano, P. D. Nellist, and G. Hughes, J. Appl. Phys. 110, 054507 (2011).

Google Scholar

[9] Y. Otsuka, J. Koike, H. Sako, K. Ishibashi, N. Kawasaki, S. M. Chung, and I. Tanaka, Appl. Phys. Lett. 96, 012101(2010).

DOI: 10.1063/1.3269602

Google Scholar

[10] N. Hirashita, S. Tokitoh and H. Uchida, Jpn. J. Appl. Phys. 32, 1787 (1993).

Google Scholar

[11] R. Pretorius, J. M. Harris, and M-A. Nicolet, Solid state electronics, 21. 667 (1978).

Google Scholar

[12] P. M. Lenahan and J. F. Conley, J. Vac. Sci. Technol. B 16, 2134 (1998).

Google Scholar

[13] L. Skuja, M. Hirano, H. Hosono, and K. Kajihara, phys. Stat. sol. (c) 2, No. 1, 15–24 (2005).

Google Scholar