Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

Abstract:

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

• Periodical: Key Engineering Materials (Volumes 510-511)
• Pages: 186-193
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.510-511.186
• Online since: May 2012
• Authors: Ashari Maqsood, M. Islam, M. Ikram, S. Salam, S. Ameer
• Keywords: IV-Characterization, Magneto Resistance, Photovoltaic Materials, Semi Conductors

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