Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)

Xue Mei Liang; Li Qin; Yong Qiang Ning; Yun Liu; Li Jun Wang

doi:10.4028/www.scientific.net/KEM.552.373

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 552Structural Improvement of 920 nm Optically Pumped...

Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)

Abstract:

920 nm OPS-VECSEL has an important application in laser display. We constructed and optimized a 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device, especially the mode, the threshold and the optical-optical translation efficiency, were analyzed by dealing with different numbers of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose the best structure of them. On this basis, we optimized the external cavity mirrors reflectivity and the simulation showed that the performances would be significantly increased.

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Periodical:

Key Engineering Materials (Volume 552)

Pages:

373-376

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.552.373

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Online since:

May 2013

Authors:

Xue Mei Liang, Li Qin, Yong Qiang Ning, Yun Liu, Li Jun Wang

Keywords:

Finite Element, Optically Pumped, Semiconductor Lasers, Structural Improvement, Vertical External-Cavity Surface Emitting Laser

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References

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