MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers

Tian Cheng Zhang; Qin Fei Ni; Xue Zhen Liu; Bin Yu; Yu Xia Wang; Yu Zhang; Xun Peng Ma; Yong Bin Wang; Yun Xu

doi:10.4028/www.scientific.net/KEM.552.389

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 552MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained...

MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers

Abstract:

2.3 μm InGaAsSb/AlGaAsSb lasers with multiple quantum wells(MQWs) have been demonstrated.The growth temperature of quantum wells is 440°C,and the growth quality of InGaAsSb/AlGaAsSb MQWs is examined by X-ray diffraction and Photoluminescence(PL) at room temperature.The energy band structure of MQWs was calculated by one-dimensional finite-difference method(1D-FDM)

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Key Engineering Materials (Volume 552)

Pages:

389-392

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.552.389

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Online since:

May 2013

Authors:

Tian Cheng Zhang, Qin Fei Ni, Xue Zhen Liu, Bin Yu, Yu Xia Wang, Yu Zhang, Xun Peng Ma, Yong Bin Wang, Yun Xu

Keywords:

AlGaAsSb, InGaAsSb, Molecular Beam Epitaxy, Multiple Quantum Well

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