Effect of Si and Ba Addition on ZnO Grain Growth and Electrical Characteristics of Bi-Based ZnO Varistors

Abstract:

With the goal of fabricating varistors with low varistor voltages, we investigated the effects of adding Ba and Si to BiCoMn-added ZnO varistors on the varistor voltage and the resistance to electrical degradation. Ba₂Mn₃O₈, which reduces the resistance to electrical degradation, was not formed at the grain boundary when Si was added. The resistance to electrical degradation was considerably improved by adding 0.10.15 mol% Si relative to samples to which small amounts of Sb had been added. The varistor voltage increased monotonically with increasing amount of added Si; it was approximately 36 V/mm for 0.1 mol% Si.

• Periodical: Key Engineering Materials (Volume 566)
• Pages: 219-222
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.566.219
• Online since: July 2013
• Authors: Atsuko Kubota, Ai Fukumori, Yuuki Sato, Shinzo Yoshikado
• Keywords: Ba Addition, Bi-Based ZnO Varistor, Electrical Degradation Characteristics, Low Varistor Voltage, Si Addition

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