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Effect of Sb Addition on the Electrical Characteristics of Bi-Based ZnO Varistors Containing Zr and Y

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Abstract:

The effects of adding Sb to a BiMnCoSiCrNiYZr-added ZnO varistor (with the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Bi is incorporated in spinel particles, and δ-Bi2O3 eventually disappears with the addition of small amounts of Bi, especially as the amount of Sb2O3 added increased. Reduction in both the nonlinearity index and the amount of δ-Bi2O3 for small amounts of added Bi with the addition of more than approximately 1.25 mol% Sb2O3 demonstrates that Sb inhibits Bi2O3 from forming deep interfacial impurity levels at the grain boundaries. The sample containing 1.2 mol% Bi2O3, 1.0 mol% ZrO2, 1.0 mol% Y2O3, and 1.5 mol% Sb2O3 added exhibits a high varistor voltage (approximately 630 V/mm), high resistance to electrical degradation and low leakage current.

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Periodical:

Key Engineering Materials (Volume 566)

Pages:

223-226

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.566.223

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Online since:

July 2013

Authors:

Takayuki Watanabe, Yosuke Tokoro, Yuuki Sato, Shinzo Yoshikado

Keywords:

Bi-Based ZnO Varistor, Leakage Current, Resistance to Electrical Degradation, Sb Addition, Varistor Voltage, Y Addition, Zr Addition

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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