Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films

Zhi Du; Jing Lu; Cong Fu Fang; Hui Huang; Xi Peng Xu

doi:10.4028/www.scientific.net/KEM.589-590.457

Paper Titles

A Scientific Method of Tool Life Evaluation for Large Cylinder Section Cutting Database
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Research on Geometric Modeling Method of Finishing Milling Cutter with Fir-Slot
p.438

The Polishing Process of Cylindrical Rollers by Using a Double-Side Lapping Machine
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Study on Fixed Abrasive Lapping Hard and Brittle Materials with Brazed Micro Powder Diamond Disk
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Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films
p.457

The Adherence Mechanism of Superalloy Honing Oilstone
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Experiment Research Progresses of Single Abrasive Grain Grinding
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Analysis of Path Distribution in Lapping and Polishing with Single Fixed Abrasive
p.475

Indentation and Scratching Experimental Research on Brittle-Ductile Transition of Optical Glass SF6
p.480

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Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films

Abstract:

In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.