Oxidation Behavior of Pressureless Liquid Phase Sintered SiC

Abstract:

The present study aims to investigate the oxidation behavioue of pressuerless sintered SiC ceramic with the AlN-Y₂O₃ as sintering additives. Two main aspects are considered: The evaluation of oxidation kinetics in the temperature rang 1200°C-1400°C for short term test (30hr) and the degradation of the flexural strength after oxidation at temperature 1400°C for 100hr. The microstructure of surface oxidation layer of silicon carbide at high temperature is studied, and the effect of reactive product s on the high temperature oxidation resistance is also analyzed. The results showed that the oxidation began at temperature more than 1200°C, and the oxidation kinetics is obeyed parabolic rule. After long term oxidation, the fracture strength decreased greatly.Key words: oxidation behavior, liquid phase sintering, silicon carbide

• Periodical: Key Engineering Materials (Volume 591)
• Pages: 164-167
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.591.164
• Online since: November 2013
• Authors: Yu Hong Chen, Liang Jiang, Wen Zhou Sun, Lan Er Wu
• Keywords: Liquid Phase Sintering (LPS), Oxidation Behavior, Silicon Carbide (SiC)

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