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HomeKey Engineering MaterialsKey Engineering Materials Vol. 591Effect of WO3 Doping on Microstructural and...

Effect of WO₃ Doping on Microstructural and Electrical Properties of ZnO-Pr₆O₁₁ Based Varistor Materials

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Abstract:

The effect of WO₃doping on microstructural and electrical properties of ZnO-Pr₆O₁₁ based varistor materials was investigated. The doped WO₃ plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO₃ from 0 to 0.5 mol%. When the doping level of WO₃ was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO₃ doped. But when the doping level of WO₃ became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO₃was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm², respectively, when the doping level of WO₃was in the range from 0.03 to 0.05 mol%.

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Periodical:

Key Engineering Materials (Volume 591)

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54-60

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.591.54

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Online since:

November 2013

Authors:

Xiu Li Fu, Yan Xu Zang, Zhi Jian Peng

Keywords:

Doping, Electrical Properties, Pr₆O₁₁, WO₃, ZnO Varistor

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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