Deformation and Fracture of Hydrogenated GaSe and InSe Layered Crystals

Olexiy A. Balitskii; Jacek Eliasz; Sergiy A. Gryshchenko; Natalia M. Polishchuk

doi:10.4028/www.scientific.net/KEM.592-593.100

Paper Titles

Modeling and Experimental Study of Long Term Creep Damage in Austenitic Stainless Steels
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3D Discrete Dislocation Dynamics Applied to a Motion of Low-Angle Tilt Boundaries
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Lattice-Spring Modeling of Graphite Accounting for Pore Size Distribution
p.92

Non-Planar Dislocations in MoSi₂
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Deformation and Fracture of Hydrogenated GaSe and InSe Layered Crystals
p.100

A Contribution to the Physical Interpretation of the Morphology of Fatigue Fracture Surfaces
p.107

The Simulation of the Fatigue Fracture Process at Random Loading
p.113

Numerical Life Estimation of Structure Components Subjected to Hydrogen Embrittlement and Cycling
p.117

Mathematical Model of Fan-Head Shear Rupture Mechanism
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 592-593Deformation and Fracture of Hydrogenated GaSe and...

Deformation and Fracture of Hydrogenated GaSe and InSe Layered Crystals

Abstract:

In the present work we establish some specific features of the fracture and behavior of anisotropic semiconductor crystals GaSe and InSe under mechanical loading and hydrogenation, which undergoes in the course of preparation of the specimens, their cutting, spalling, and other technological operations of the production of future semiconductor solar energy devices.

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Periodical:

Key Engineering Materials (Volumes 592-593)

Pages:

100-103

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.592-593.100

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Online since:

November 2013

Authors:

Olexiy A. Balitskii, Jacek Eliasz*, Sergiy A. Gryshchenko, Natalia M. Polishchuk

Keywords:

Anisotropy, Fracture Toughness, Hydrogen Environments, Layered Semiconductor

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