Key Engineering Materials Vols. 602-603

Abstract: Carbon nanofillers/polymer nanocomposites foam with electrical conductivity was a novel functional material. In this study, the CNTs/PMMA nanocomposites were prepared by the combination of ultrasonic dispersion and anti-solvent precipitation method. Then supercritical foaming method was untilized applied to prepare the foams. The morphology and the electrical conductivity of the foams were investigated. The conductivity of the nanocomposites showed a conductor behavior which was increased t from 1×10^-6 S/cm to 1×10^-5S/cm with the CNTs content range from 1 wt.% to 2.5 wt.%. After foaming, the cell size of the foams was below 10 μm while the cell density increased 2~3 orders of magnitude compared with PMMA foams. The produced CNTs/PMMA nanocomposites foams exhibited a wide range electricity conductivity of the nanofiller contents. Key words: structure, electrical conductivity, CNTs, nanocomposites foams

Abstract: Many nonvolatile memory devices such as, ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM), ovonic universal memory (OUM), and resistive random access memory (RRAM) were considerable discussed and investigated. For these nonvolatile memory devices, the RRAM devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The RRAM devices were only consist of one resistor and one corresponding transistor. In this study, the CuO thin films deposited on ITO/glass and Pt/Ti/SiO₂/Si substrates for applications in RRAM devices were produced and investigated. The optimal sputtering conditions of as-deposited CuO thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. The electrical and physics properties of CuO thin films for applications in RRAM devices were discussed.

Abstract: Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Abstract: Uniform BaTiO₃ polycrystalline coating layer on Ni nanoparticles is achieved by a novel sol-precipitation method. The Fourier transform infrared spectra (FT-IR) of the coated samples inhibit that there is typical Ba-O and Ti-O bond for crystalline BaTiO₃.The influence of reaction time on the properties of the coated samples is investigated. It is found that the coating layer contains less BaCO₃ impurity and crystallizes more completely along with the increase of the reaction time. Moreover, the anti-oxidation properties of these samples are significantly improved.