Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Min Chang Kuan; Fann Wei Yang; Chien Min Cheng; Kai Huang Chen; Jian Tz Lee

doi:10.4028/www.scientific.net/KEM.602-603.1056

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 602-603Bipolar Switching Properties of the Manganese...

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Abstract:

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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Periodical:

Key Engineering Materials (Volumes 602-603)

Pages:

1056-1059

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https://doi.org/10.4028/www.scientific.net/KEM.602-603.1056

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Online since:

March 2014

Authors:

Min Chang Kuan, Fann Wei Yang, Chien Min Cheng*, Kai Huang Chen, Jian Tz Lee

Keywords:

Electrical Properties, Manganese Oxide, Physical Properties, RRAM

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References

[1] D. K. Schroder, Semiconductor Material and Device Characterization, 2nd Edition, John Wiley and Cons, Inc, pp.1105-1109, (1998).

Google Scholar

[2] C. K, Maiti, S. Maikap, S. Chatterjee, S. K. Nandi, S. K. Samanta, Hafnium Oxide Gate Dielectric for Strained-Si1-xGex, Solid-State Electronic, vol. 47, pp.1995-2000 (2003).

DOI: 10.1016/s0038-1101(03)00219-3

Google Scholar

[3] A. Prakash, S. Maikap, C. S. Lai, T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Tsai, Bipolar Resistive Switching Memory Using Bilayer TaOx/Wox films, Solid-State Electronics 77 pp.35-40 (2012).

DOI: 10.1016/j.sse.2012.05.028

Google Scholar

[4] K. P. Biju, X. Liu, J. Shin, I. Kim, S. Jung, M. Siddik, J. Lee, A. Lgnatiev, H. Hwang, Highly Asymmetruc Bipolar Resistive Switchng in Solution-Processed Pt/TiO2/W Devices for Cross-Point Application, Current Applied Physics 11 pp. S102-S106 (2011).

DOI: 10.1016/j.cap.2011.07.018

Google Scholar

[5] H. Mahne, S. Slesazeck, S. Jakschik, I. Dirnstorfer, T. Nikolajick, The Influence of Crystallinity on the Resistive Switching Behavior of TiO2, Microelectronic Engineering 88 pp.1148-1151 (2011).

DOI: 10.1016/j.mee.2011.03.030

Google Scholar

[6] Nagarajan Raghavan, Kin Leong Pey, Wenhu Liu, Xing Wu, Xiang Li, Michel Bosman, Evidence for Compliance Controlled Oxygen Vacancy and Metal Filamenr Based Resistive Switching Mechanisms in RRAM, Microelectronic Engineering 88 pp.1124-1128 (2011).

DOI: 10.1016/j.mee.2011.03.027

Google Scholar