Composition, Structure and Electrical Resistivity of TiOx Thin Films Deposited by RF Magnetron Sputtering at Varied Substrate Temperatures

Hai Xia Su; Zhi Jian Peng; Xiu Li Fu

doi:10.4028/www.scientific.net/KEM.602-603.1039

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 602-603Composition, Structure and Electrical Resistivity...

Composition, Structure and Electrical Resistivity of TiO_x Thin Films Deposited by RF Magnetron Sputtering at Varied Substrate Temperatures

Abstract:

TiO_x thin films were deposited by RF magnetron sputtering with TiO_x (x<2) target at varied substrate temperatures. The composition and microstructure of the films was characterized by grazing incidence X-ray diffraction, scanning electron microscopy and Raman spectroscopy, which revealed that the films deposited at low temperatures were amorphous, and as the temperature increased up to 600 °C, the prepared films became crystalline and a TiO₂ anatase phase was identified. Also the electrical resistivity of the as-prepared TiO_x films was investigated as a function of the deposition temperature. The result indicates that with the raise of substrate temperature, the electrical resistivity of the deposited films decreased sharply.

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Periodical:

Key Engineering Materials (Volumes 602-603)

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1039-1042

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https://doi.org/10.4028/www.scientific.net/KEM.602-603.1039

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March 2014

Authors:

Hai Xia Su, Zhi Jian Peng, Xiu Li Fu

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Crystallization, RF Magnetron Sputtering, Thin Film, Titanium Oxide

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