For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Surface Modification of Nano-Titanium and its Effect on the Antibacterial Property of Waterborne Wood Coating
p.88
Design and Deposition of Infrared Antireflection Protection Film on Magnesium Fluoride Substrate for 3~5 μm
p.94
Design and Fabrication of Mult-Wave Band Yellow Laser Filter Film
p.100
Design and Evaluation of a High-Accuracy Measurement System for Sheet Resistance of Thin Films
p.106
Optical and Electrical Properties of P-Type N-Doped ZnO Film
p.113
Performance of Wood Flooring UV Coatings Interfacial Modified by Nano-Silica
p.118
Effect of RuO2 on Piezoresistive Properties of CB/MVQ Composite Materials
p.124
Influence of Nano Abrasive on Chemical Mechanical Ultra-Precision Machining of Sapphire Substrate Surfaces
p.130
The Componential and Morphological Characteristics of Cu3N Induced by Femtosecond Laser Pulses
p.135

Optical and Electrical Properties of P-Type N-Doped ZnO Film

Article Preview

Abstract:

Since ZnO is a wide band gap (3.37 eV) semiconductor with a large exitonic binding energy (60 meV), it has been considered as a candidate for various applications, such as ultraviolet (UV) light emitting diodes and laser diodes. For the applications of ZnO-based optoelectronic devices, it is necessary to produce n and p type ZnO films with the high quality. Since ZnO is naturally n-type semiconductor material due to intrinsic defects, such as oxygen vacancies, zinc interstitials, etc., it is easy to produce n-type ZnO with high quality. However, it is difficult to produce low-resistive and stable p-type ZnO due to its asymmetric doping limitations and the self-compensation effects of the intrinsic defects. According to the theoretical studies, p-type ZnO can be realized using group-V dopants substituting for O, such as N, P and As. Among them, N has been suggested to be an effective acceptor dopant candidate to achieve p-type ZnO, because that nitrogen has a much smaller ionic size than P and As and the energy level of substitutional NO is lower than that of substitutional PO and AsO. Transparent p-type ZnO: N thin films have been fabricated using the pulsed laser deposition method at deposition temperatures 800 °C under the O2 and N2 mixing pressure 6Pa. N-doped ZnO films were deposited on sapphire substrate using metallic zinc (99.999%) as target. The structural, optical and electrical properties of the films were examined by XRD, UV-visit spectra and Hall effect measurement. We found that thin film contain the hexagonal ZnO structure. The Hall effect measurement revealed that the carrier concentration is 5.84×1018 1/ cm3, and Hall mobility is 0.26 cm2/Vs, electrical resistivity is 4.12ohm-cm. Film thickness is 180nm. Besides, Visible light transmittance is more than 80%, and calculative band-gap is 3.1 eV, which is lower than ZnO.

You might also be interested in these eBooks
Micro-Nano Technology XV View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 609-610)

Pages:

113-117

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.609-610.113

Citation:

Cite this paper

Online since:

April 2014

Authors:

Ya Juan Sun, Wan Xing Wang

Keywords:

Electrical Transport, N-Doped, Pulsed Laser Deposition Technique, ZnO Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Lu, Y. Tu, X. Lin, B. Fang, D. Luo, A. Laaksonen, Materials Letters[J] 64 (2010) 2072–(2075).

Google Scholar

[2] Y.J. Chen, Y.Y. Shih, C.H. Ho, J.H. Du, Y.P. Fu, Ceramics International[J] 36 (2010) 69–73.

Google Scholar

[3] G.H. Lee, Ceramics International[J] 36 (2010) 1871–1875.

Google Scholar

[4] Z. Yan, Y. Ma, P. Deng, Z. Yu, C. Liu, Z. Song, Applied Surface Science[J] 256 (2010) 2289–2292.

Google Scholar

[5] S.B. Zhang, S.H. Wei, A. Zunger, Physical Review B[J] 63 (2001) 075205–075212.

Google Scholar

[6] X.H. Wanga,B. Yao C.X. Cong Z.P. Wei D.Z. Shen Z.Z. Zhang, B.H. Li, Y.M. Lu, D.X. Zhao, J.Y. Zhang, X.W. Fan, Thin Solid Films[J] 518(2010)3428–3431.

DOI: 10.1016/j.tsf.2009.12.007

Google Scholar

[7] N.H. Erdogan, K. Kara,H. Ozdamar, H. Kavak,R. Esen, H. Karaagac, Journal of Alloys and Compounds[J]509(2011)8922–8926.

DOI: 10.1016/j.jallcom.2011.06.048

Google Scholar

[8] Y.J. Zeng Z.Z. Ye,Y.F. Lu,J.G. Lu,W.Z. Xu,L.P. Zhu, B.H. Zhao,Y. Che, Chemical Physics Letters [J] 441(2007) 115–118.

DOI: 10.1016/j.cplett.2007.04.089

Google Scholar

[9] J. Jiang L.P. Zhu J.R. Wang X.Q. Gu,X.H. Pan Y.J. Zeng, Z.Z. Ye, MaterialsLetters[J] 62 (2008) 536–538.

Google Scholar

[10] V. Vaithianathana Y.H. Lee B.T. Lee,S. Hishita,S. Kim, JournalofCrystal Growth[J] 287(2006) 85–88.

Google Scholar

[11] H.K. Choi J.H. Park S.H. Jeong B.T. Lee, Semiconductor Science and Technology[J] 24(2009) 105003–105007.

Google Scholar

[12] X. Pan,Z. Ye,J. Li,X. Gu,Y. Zeng,H. He,L. Zhu,Y. Che, Applied Surface Science[J] 253(2007) 5067–5069.

DOI: 10.1016/j.apsusc.2006.11.014

Google Scholar

[13] M.A. Myers J.H. Lee,Z. Bi,H. Wang, Journal of Physics: Condensed Matter[J] 24(2012) 145802–145809.

Google Scholar

[14] D. Wang,J. Zhou,G. Liu, Journal of Alloy sand Compounds[J] 481 (2009) 802–805.

Google Scholar

[15] W. Bin, Z. Yue, M. Jiahua, S. Wenbin, Applied Physics A[J] 94 (2009) 715–718.

Google Scholar

[16] N. Fujimura, T. Nishihara, S. Goto, J. Xu, T. Ito, Journal of Crystal Growth [J] 130 (1993) 269–279.

Google Scholar

[17] C.L. Kuo, C.L. Wang, H.H. Ko, W.S. Hwang, K. Chang, W.L. Li, H.H. Huang, Y.H. Chang, M.C. Wang, Ceramics Inter- national[J] 36 (2010) 693–698.

Google Scholar

[18] R. Swapna, M.C. Santhosh Kumar, Ceramics International [J] 38 (2012) 3875–3883.

Google Scholar

[19] R. Swapna, M.C. Santhosh Kumar, Ceramics International [J] 39 (2013) 1799–1806.

Google Scholar

[20] H. Nian, S.H. Hahn, K.K. Koo, E.W. Shin, E.J. Kim, Materials Letters [J] 63 (2009) 2246–2248.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.