Research on Air-Media Mixed Substrate Technology of GaAs Based Millimeter Wave Antenna

Guo Qing Jiang; Shi Xing Jia; Fang Hou; Jian Zhu

doi:10.4028/www.scientific.net/KEM.609-610.51

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 609-610Research on Air-Media Mixed Substrate Technology...

Research on Air-Media Mixed Substrate Technology of GaAs Based Millimeter Wave Antenna

Abstract:

Becoming another key technology for system integration, GaAs based millimeter wave antenna is fabricated by MEMS technology, with high permittivity dielectric substrates. To obtain good performance, it is necessary to achieve the equivalent of low dielectric constant of the local area below microstrip patch antenna. The article describes deep etching fabrication and multiple etching with thick photoresist masking to creat air cavity under the microstrip patch which usually has the height from 70% to 80% of the original media substrate, thus it forms the air-mixed media substrate. Especially for precision control of the substrate thickness, use back thinning and high-precision polishing processes. At last realize back cavity depth of 227μm in the GaAs substrate and complete the process of Ka band MEMS patch antenna. The measurement results: the center frequency is 37.9 GHz, bandwidth is 4.4%, radiation efficiency above 50%.

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Periodical:

Key Engineering Materials (Volumes 609-610)

Pages:

51-54

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.609-610.51

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Online since:

April 2014

Authors:

Guo Qing Jiang*, Shi Xing Jia, Fang Hou, Jian Zhu

Keywords:

Air-Media Mixed Substrate, Dry Etching, GaAs Based Patch Antenna, Polishing Process, Thinning Process

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* - Corresponding Author

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