Research of Micro-Inertial Device High-Aspect-Ratio Etching Parameters

Abstract:

This is mainly due to the high chemical reactivity and spontaneous etching nature of the fluorine radicals towards silicon, and the high volatility of the silicon fluorides as reaction products. Anisotropy can only be achieved by the inclusion of sidewall passivation schemes to the process. The existing approaches to deep reactive ion etching (DRIE) of silicon are distinguished by the way sidewall passivation is achieved, the key to anisotropy and overall performance of the etch process. Cryogenic etching and the so-called Bosch process with alternating etch and passivation cycles are the two most well-known high-aspect-ratio silicon etch processes and are discussed in this paper.

• Periodical: Key Engineering Materials (Volumes 609-610)
• Pages: 706-709
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.609-610.706
• Online since: April 2014
• Authors: Gui Xiong Shi*, Shi Xing Jia, Guo Qin Jiang, Jian Zhu
• Keywords: High-Aspect-Ratio Etch, Inertial Device, MEMS

References

[1] Wen Liang, Wang Jiayou. Micro&nano electronic technology, 2004, 41（6）: 30-34.

[2] Liu Huan, Zhou Zhen, Journal of sensing technology, 2011, 24（2）: 200-203.

[3] Wang Zheyao, Microsystem design and Fabrication, Tsinghua Press, Beijing, 2008, 103-110.

[4] Liu Yu, Solid vibration gyroscope and navigation technology[, China Aerospace Press, Beijing, 2010, 230-260.

[5] Cenk, MEMS Vibratory Gyroscopes Structural Approaches to Improve Robustness], NY: Springer, (2009).

[6] Reza Ghodssi, MEMS Materials and Processes Handbook, NY: Springer, (2011).

[7] Volker Kempe, Inertial MEMS Principles and Practice, Cambridge: Cambridge University Press, (2011).