Research on Fabrication and Electronic Characteristics of Dual-Extended Nano Structure Memristor

Abstract:

This paper proposes a novel dual-extended nanostructure memristor model compared to HP memristor can be called Single-extended memristor. Oxygen ions and oxygen vacancies all are effective carriers in this memristor as the structure are made of TiO_2-x/TiO₂/TiO_2+x three nanolayers between Pt electrodes.The sample of dual-extended memristors arrays were fabricated by ways which these cost-effective methods can be exploited to produce memristors with nanoscale electrode width. Dual-extended nanostructure memristor model will be represented and the mechanism will be discussed. Fabrication methods of the memristor device are introduced and the electronic characteristics are measured and plotted. The results are discussed will experimentally demonstrated that higher switching speed and lower power will be gained by using dual-extended memristors to design IC.

• Periodical: Key Engineering Materials (Volumes 609-610)
• Pages: 728-733
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.609-610.728
• Online since: April 2014
• Authors: Xiao Hui Bai, Dian Zhong Wen*, Celal Con, Zhang Jian, Mustafa Yavuz, Cui Bo
• Keywords: Dual-Extended, Electronic Characteristics, Memristor, NIL, TiO_2-x/TiO₂/TiO_2+x

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