Enhanced Thermoelectric Properties of Mg2Si0.3Sn0.7 Compounds by Bi Doping

Mei Jun Yang; Qiang Shen; Lian Meng Zhang

doi:10.4028/www.scientific.net/KEM.616.174

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 616Enhanced Thermoelectric Properties of...

Enhanced Thermoelectric Properties of Mg₂Si_0.3Sn_0.7Compounds by Bi Doping

Abstract:

The single phase of Bi-doped Mg₂Si_0.3Sn_0.7 compounds have been successfully fabricated by solid state reaction and spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg₂Si_0.3Sn_0.7 is investigated. The doping of Bi atom results in the increase of carrier concentrations and ensures the increase of electrical conductivity. Although the thermal conductivity and Seebeck coefficient shows a slight increase, the figure of merit of Mg₂Si_0.3Sn_0.7 compounds still increases with the increasing contents of Bi-doping. When Bi-doping content is 1.5at%, the Mg₂Si_0.3Sn_0.7 compound obtained the maximum value, ZT, is 1.03 at 640 K.

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Key Engineering Materials (Volume 616)

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174-177

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https://doi.org/10.4028/www.scientific.net/KEM.616.174

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June 2014

Authors:

Mei Jun Yang*, Qiang Shen, Lian Meng Zhang

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Bi-Doping, Mg₂Si_0.3Sn_0.7, Thermoelectric Properties

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