Improved GZO Thin Film Properties with SiO_x Buffer Layer by Atmospheric Pressure Plasma Deposition

Abstract:

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO_x could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO_x deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm². GZO thin film with SiO_x buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO_x/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

• Periodical: Key Engineering Materials (Volume 625)
• Pages: 196-200
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.625.196
• Online since: August 2014
• Authors: Kuo Hui Yang, Po Ching Ho, Je Wei Lin, Ta Hsin Chou*, Kow Ming Chang
• Keywords: Atmospheric Pressure Plasma, Buffer Layer, Deposition, Multi-Jet, Sheet Resistance

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