Thermodynamic Analysis of Chemical Vapor Deposition Progress for SiC Coatings

Ming Wei Chen; Hai Peng Qiu; Jian Jiao; Xiu Qian Li; Yu Wang; Wei Jie Xie

doi:10.4028/www.scientific.net/KEM.633.183

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 633Thermodynamic Analysis of Chemical Vapor...

Thermodynamic Analysis of Chemical Vapor Deposition Progress for SiC Coatings

Abstract:

Equilibrium compositions of chemical vapor deposition progress for silicon carbide (CVD-SiC) coatings with MTS/H₂ mixture system were calculated by means of HSC Chemistry5.0 code, and influences of the reaction temperature (T), the system pressure (P) and the composition of raw materials (molar ratio of H₂ to SiCH₃Cl₃, β) were investigated. Thermodynamic analysis showed that the value of n_C /n_SiC in reaction product decreased to a minimum and then increased with the increase of the reaction temperature between 700-1600°C, which meant an optimal reaction temperature existed theoretically for CVD-SiC coatings with highest purity. Furthermore, CVD-SiC coatings with high purity were obtained by experiments under the reaction pressure of 10kPa, H₂/SiCH₃Cl₃ value of 10 and reacton temperature of 1100°C, which was in accordance with the theoretical prediction.

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Key Engineering Materials (Volume 633)

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183-188

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https://doi.org/10.4028/www.scientific.net/KEM.633.183

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Online since:

November 2014

Authors:

Ming Wei Chen, Hai Peng Qiu, Jian Jiao, Xiu Qian Li, Yu Wang, Wei Jie Xie

Keywords:

Chemical Vapor Deposition (CVD), Silicon Carbide Coating, Thermodynamic

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