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Paper Titles
The Influece of High-Temperature Annealing on the Transient Optical and Structure Properties of Semi-Insulating GaAs
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Radiative and Nonradiative Recombination Processes in Ion Implanted Semi-Insulating GaAs
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EL2 Intracenter Transition in Photoconductivity Spectra of Semi-Insulating GaAs:Cr
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IR Reflection from Semiconductor Multilayered Structures with the Composition Gradient Layers
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The Energy Gaps in SiXGe1-X Alloys
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Optical Characterization of Monolayer Islands and Interface Effects in InGaAs/InP Multiquantum Well Structures
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Photoluminescence Probing the Si Incorporation in MBE Grown AlXGa1-XAs
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Associates of Charged Defects in Gallium Arsenide: Calculation and Photoluminescence Data
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Photoluminescence of Bismuth Doped GaSb
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 65The Energy Gaps in SiXGe1-X Alloys

The Energy Gaps in SiXGe1-X Alloys

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Key Engineering Materials (Volume 65)

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79-86

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https://doi.org/10.4028/www.scientific.net/KEM.65.79

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January 1992

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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